High power semiconductor laser emitter

 

Principle of operation

Laser radiation source is matrix of semiconductor injector lasers. Specially designed compact pumping current source provide powerful laser radiation pulse with 20ns width forming.




 

Experimentally registered radiation intensity distribution
of semiconductor injector lasers matrix in far-field region

Characteristics

Radiation wavelength, nm	~900
Radiation pulse width, ns	20
Radiation pulse peak power, not less than, W	500
Pulse frequency, Hz	0 ... 2000
Oscillator overall dimensions, mm3	25х15х110
Power supply – at the user request	12,6 V

 

Area of application

Laser location, night vision systems.

References

• E.V. Buryi, A.E. Kosykh, "Spatial and temporal characteristics of the radiation emitted by an array of injection lasers generating nanosecond pulses", QUANTUM ELECTRON, 1995, 25 (8).
• E. V. Buryi, A. E. Kosykh, M. N. Gruden’, and V. D. Vetrov. Spatial Radiation Characteristics of ILPI-111 High-Power Semiconductor Laser Arrays // Instruments and Experimental Techniques. – 1996. – № 4.