High power semiconductor laser emitter
Principle of operation
Laser radiation source is matrix of semiconductor injector lasers. Specially designed compact pumping current source provide powerful laser radiation pulse with 20ns width forming.
Experimentally registered radiation intensity distribution
of semiconductor injector lasers matrix in far-field region
|Radiation wavelength, nm||~900|
|Radiation pulse width, ns||20|
|Radiation pulse peak power, not less than, W||500|
|Pulse frequency, Hz||0 ... 2000|
|Oscillator overall dimensions, mm3||25х15х110|
|Power supply – at the user request||12,6 V|
Area of application
Laser location, night vision systems.
- E.V. Buryi, A.E. Kosykh, "Spatial and temporal characteristics of the radiation emitted by an array of injection lasers generating nanosecond pulses", QUANTUM ELECTRON, 1995, 25 (8).
- E. V. Buryi, A. E. Kosykh, M. N. Gruden’, and V. D. Vetrov. Spatial Radiation Characteristics of ILPI-111 High-Power Semiconductor Laser Arrays // Instruments and Experimental Techniques. – 1996. – № 4.